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| Semiconductor SDB110Q Schottky Barrier Diode Features * Low forward voltage : VF= Max. 0.4V (@ IF=10mA) * Low reverse current : IR= Max. 0.5 (@ VR=5V) * High speed switching application Ordering Information Type No. SDB110Q Marking S3 Package Code SOD-523 Outline Dimensions unit : mm 2 1 2 1 PIN Connections 1. Anode 2. Cathode KSD-E009-003 1 SDB110Q Absolute maximum ratings Characteristic Reverse voltage Non-repetitive peak surge current Forward current Junction temperature Storage temperature range (Ta=25C) Symbol VR IFSM* IF Tj Tstg Ratings 10 2 30 150 -55 ~ 150 Unit V A mA C C * 60Hz for 1 Electrical Characteristics Characteristic Forward voltage 1 Forward voltage 2 Forward voltage 3 Reverse current 1 Reverse current 2 Total capacitance (Ta=25C) Test Condition IF=1mA IF=10mA IF=30mA VR=5V VR=10V VR=5V, f=1MHz Symbol VF(1) VF(2) VF(3) IR(1) IR(2) CT Min. Typ. Max. 0.1 4.2 0.3 0.4 0.5 0.5 1 - Unit V V V pF KSD-E009-003 2 SDB110Q Electrical Characteristic Curves Fig. 1 IF-VF Fig. 2 IR -VR Fig. 3 CT-VR KSD-E009-003 3 SDB110Q These AUK Corp. products are intended for usage in general electronic equipment (Office and communication equipment, measuring equipment, domestic electrification, etc.) Please make sure that you consult with us before you use these AUK products in equipm- ents which require high quality and/or reliability, and in equipments which could have major impact to the welfare of human life(atomic energy control, airplane, spaceship, traffic signal, combustion central, all types of safety device, etc.) AUK cannot accept liability to any damage which may occur in case these AUK products were used in the mentioned equipments without prior consultation KSD-E009-003 4 |
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